technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/592 t4-lds-0051 rev. 1 (072808) page 1 of 2 devices levels 2n7228 2n7228u jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain ? source voltage v ds 500 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 12.0 adc continuous drain current t c = +100c i d2 8.0 adc max. power dissipation t c = +25c p tl 150 (1) w drain to source on state resistance r ds(on) 0.415 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 1.2 w/c for t c > +25c (2) v gs = 10vdc, i d = 8a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 500 vdc gate-source voltage (threshold) v ds v gs , i d = 0.25ma v ds v gs , i d = 0.25ma, t j = +125c v ds v gs , i d = 0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 400v v gs = 0v, v ds = 400v, t j = +125c i dss1 i dss2 25 0.25 adc madc static drain-source on-state resistance v gs = 10v, i d = 8.0a pulsed v gs = 10v, i d = 12.0a pulsed t j = +125c v gs = 10v, i d = 8.0a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.415 0.515 0.90 diode forward voltage v gs = 0v, i d = 12a pulsed v sd 1.7 vdc to-254aa u-pkg (u3) to-276ab
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/592 t4-lds-0051 rev. 1 (072808) page 2 of 2 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = 10v, i d = 12a v ds = 50v q g(on) q gs q gd 120 19 70 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 12a, v gs = 10vdc, gate drive impedance = 7.5 , v dd = 250vdc t d(on) t r t d(off) t f 35 190 170 130 ns diode reverse recovery time di/dt 100a/s, v dd 30v, i f = 12a t rr 1600 ns
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